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- 228E-9.2 C 5-26 I = E/(R1+R2), I = 8/(16000+8000) |I = .333 mA, Vout = I*R2 |V = 8000*.000333, V = 2.67
- In Figure 4AE-9, what values of V2 and R3 result in the same
- voltage and current characteristics as when V1 is 8-volts, R1
- is 16 kilohms, and R2 is 8 kilohms?
-
- A. R3 = 24 kilohms and V2 = 5.33 volts
- B. R3 = 5.33 kilohms and V2 = 8 volts
- C. R3 = 5.33 kilohms and V2 = 2.67 volts
- D. R3 = 24 kilohms and V2 = 8 volts
- *
- 229E-9.3 C 5-26 I = E/(R1+R2) = .33 mA, Vout = I*R2 |V = 16E3*3.33E-3, V = 5.33
- In Figure 4AE-9, what values of V2 and R3 result in the same
- voltage and current characteristics as when V1 is 8-volts, R1
- is 8 kilohms, and R2 is 16 kilohms?
-
- A. R3 = 24 kilohms and V2 = 8 volts
- B. R3 = 8 kilohms and V2 = 4 volts
- C. R3 = 5.33 kilohms and V2 = 5.33 volts
- D. R3 = 5.33 kilohms and V2 = 8 volts
- *
- 230E-9.4 D 5-26 Rt = R1/2 (Parallel equals) |V2 = V1/2 (Divider equal)
- In Figure 4AE-9, what values of V2 and R3 result in the same
- voltage and current characteristics as when V1 is 10-volts, R1
- is 10 kilohms, and R2 is 10 kilohms?
-
- A. R3 = 10 kilohms and V2 = 5 volts
- B. R3 = 20 kilohms and V2 = 5 volts
- C. R3 = 20 kilohms and V2 = 10 volts
- D. R3 = 5 kilohms and V2 = 5 volts
- *
- 231E-9.5 C 5-26 With parallel resistors |Rt is less than smallest
- ln Figure 4AE-9, what values of V2 and R3 result in the same
- voltage and current characteristics as when V1 is 10-volts, R1
- is 20 kilohms, and R2 is 10 kilohms?
-
- A. R3 = 30 kilohms and V2 = 10 volts
- B. R3 = 6.67 kilohms and V2 = 10 volts
- C. R3 = 6.67 kilohms and V2 = 3.33 volts
- D. R3 = 30 kilohms and V2 = 3.33 volts
- *
- 232E-9.6 A 5-26 R3 is always less than either R1 or R2 |R3 = R1*R2/(R1+R2), R3 = 1E4*2E4/3E4 |V2 is always less than V1
- In Figure 4AE-9, what values of V2 and R3 result in the same
- voltage and current characteristics as when V1 is 10-volts, R1
- is 10 kilohms, and R2 is 20 kilohms?
-
- A. R3 = 6.67 kilohms and V2 = 6.67 volts
- B. R3 = 6.67 kilohms and V2 = 10 volts
- C R3 = 30 kilohms and V2 = 6.67 volts
- D. R3 = 30 kilohms and V2 = 10 volts
- *
- 233E-9.7 B 5-26 Rt = R1/2 (Parallel equals) |V2 = V1/2 (Divider equal)
- In Figure 4AE-9, what values of V2 and R3 result in the same
- voltage and current characteristics as when V1 is 12-volts, R1
- is 10 kilohms, and R2 is 10 kilohms?
-
- A. R3 = 20 kilohms and V2 = 12 volts
- B. R3 = 5 kilohms and V2 = 6 volts
- C. R3 = 5 kilohms and V2 = 12 volts
- D. R3 = 30 kilohms and V2 = 6 volts
- *
- 234E-9.8 B 5-26 R3 is always less than either R1 or R2 |V2 is always less than V1
- In Figure 4AE-9, what values of V2 and R3 result in the same
- voltage and current characteristics as when V1 is 12-volts, R1
- is 20 kilohms, and R2 is 10 kilohms?
-
- A. R3 = 30 kilohms and V2 = 4 volts
- B. R3 = 6.67 kilohms and V2 = 4 volts
- C. R3 = 30 kilohms and V2 = 12 volts
- D. R3 = 6.67 kilohms and V2 = 12 volts
- *
- 235E-9.9 C 5-26 R3 is always less than either R1 or R2 |V2 is always less than V1
- In Figure 4AE-9, what values of V2 and R3 result in the same
- voltage and current characteristics as when V1 is 12-volts, R1
- is 10 kilohms, and R2 is 20 kilohms?
-
- A. R3 = 6.67 kilohms and V2 = 12 volts
- B. R3 = 30 kilohms and V2 = 12 volts
- C. R3 = 6.67 kilohms and V2 = 8 volts
- D. R3 = 30 kilohms and V2 = 8 volts
- *
- 236E-9.10 C 5-26 Rt = R1/2 (Parallel equals) |V2 = V1/2 (Divider equal)
- In Figure 4AE-9, what values of V2 and R3 result in the same
- voltage and current characteristics as when V1 is 12-volts, R1
- is 20 kilohms, and R2 is 20 kilohms?
-
- A. R3 = 40 kilohms and V2 = 12 volts
- B. R3 = 40 kilohms and V2 = 6 volts
- C. R3 = 10 kilohms and V2 = 6 volts
- D. R3 = 10 kilohms and V2 = 12 volts
- *
- 237F-1.1 D 6-3 Semiconductor symbols|usually have an arrow
- What is the schematic symbol for a semiconductor diode/rectifier?
- |
- A. ┌─ B. │
- \ ──┴──
- ──/\/\/\/\/\/\─ ■
- \ O
- │
-
-
- C. │ │ D.
- ───┤ ├─── ──├───
- │ │
- *
- 238F-1.2 A 6-1 Junction diodes are used for|high power applications and |point contact are use at VHF
- Structurally, what are the two main categories of
- semiconductor diodes?
-
- A. Junction and point contact
- B. Electrolytic and junction
- C. Electrolytic and point contact
- D. Vacuum and point contact
- *
- 239F-1.3 D 6-6 Look for a Z
- What is the schematic symbol for a Zener diode?
- |
- A. ─┐ B. │
- ──├─── │/
- ─┘ ──├───
- │
-
-
- C. D. ─┐
- ──│── ──├───
- ─┘ └─
- *
- 240F-1.4 C 6-5 Voltage reference & regulator
- What are the two primary classifications of Zener diodes?
-
- A. Hot carrier and tunnel
- B. Varactor and rectifying
- C. Voltage regulator and voltage reference
- D. Forward and reversed biased
- *
- 241F-1.5 B 6-5 Constant voltage
- What is the principal characteristic of a Zener diode?
-
- A. A constant current under conditions of varying voltage
- B. A constant voltage under conditions of varying current
- C. A negative resistance region
- D. An internal capacitance that varies with the applied
- voltage
- *
- 242F-1.6 A 6-6 To two hundred volts
- What is the range of voltage ratings available in
- Zener diodes?
-
- A. 2.4 volts to 200 volts
- B. 1.2 volts to 7 volts
- C. 3 volts to 2000 volts
- D. 1.2 volts to 5.6 volts
- *
- 243F-1.7 C 6-6 "Arrows" are going into|a tunnel
- What is the schematic symbol for a tunnel diode?
- |
-
- │
- A. ──├─── B. │/
- ─┘ ──├───
- │
-
-
- ─┐ │
- C. ──│── D. ││/
- ─┘ ──┤ ├──
- ││
- *
- 244F-1.8 C 6-6 Unusual resistance curve
- What is the principal characteristic of a tunnel diode?
-
- A. A high forward resistance
- B. A very high PIV
- C. A negative resistance region
- D. A high forward current rating
- *
- 245F-1.9 C 6-6 Tunnel
- What special type of diode is capable of both amplification
- and oscillation?
-
- A. Point contact diodes
- B. Zener diodes
- C. Tunnel diodes
- D. Junction diodes
- *
- 246F-1.10 D 6-5 Look at drawing in book|VARiable-capACiTOR A|capacitor with an arrow
- What is the schematic symbol for a varactor diode?
- |
-
- │ ─┐
- A. │/ B. ──├───
- ──├─── └─
- │
-
-
- │
- C. ││/ D. ──│├──
- ──┤ ├──
- ││
- *
- 247F-1.11 A 6-4 VARiable-capACiTOR diode
- What type of semiconductor diode varies its internal capacitance
- as the voltage applied to its terminals varies?
-
- A. A varactor diode
- B. A tunnel diode
- C. A silicon-controlled rectifier
- D. A Zener diode
- *
- 248F-1.12 B 6-4 Electronic variable cap.|VARiable-capACiTOR
- What is the principal characteristic of a varactor diode?
-
- A. It has a constant voltage under conditions of varying current
- B. Its internal capacitance varies with the applied voltage
- C. It has a negative resistance region
- D. It has a very high PIV
- *
- 249F-1.13 D 6-4 VARiable-capACiTOR
- What is a common use of a varactor diode?
-
- A. As a constant current source
- B. As a constant voltage source
- C. As a voltage controlled inductance
- D. As a voltage controlled capacitance
- *
- 250F-1.14 D 6-7 Mixers
- What is a common use of a hot-carrier diode?
-
- A. As balanced mixers in SSB generation
- B. As a variable capacitance in an automatic
- frequency control circuit
- C. As a constant voltage reference in a power
- supply
- D. As VHF and UHF mixers and detectors
- *
- 251F-1.15 B 6-3 Heating
- What limits the maximum forward current in a junction
- diode?
-
- A. The peak inverse voltage
- B. The junction temperature
- C. The forward voltage
- D. The back EMF
- *
- 252F-1.16 D 6-3 PIV and forward current
- How are junction diodes rated?
-
- A. Maximum forward current and capacitance
- B. Maximum reverse current and PIV
- C. Maximum reverse current and capacitance
- D. Maximum forward current and PIV
- *
- 253F-1.17 C 6-7 RF detectors
- What is a common use for point contact diodes?
-
- A. As a constant current source
- B. As a constant voltage source
- C. As an RF detector
- D. As a high voltage rectifier
- *
- 254F-1.18 D 6-7 Point contact
- What type of diode is made of a metal whisker touching a very
- small semi-conductor die?
-
- A. Zener diode
- B. Varactor diode
- C. Junction diode
- D. Point contact diode
- *
- 255F-1.19 C 6-4 PIN diodes are used as RF switches
- What is one common use for PIN diodes?
-
- A. As a constant current source
- B. As a constant voltage source
- C. As an RF switch
- D. As a high voltage rectifier
- *
- 256F-1.20 C 6-4 PIN diodes are used as RF switches
- What special type of diode is often used in RF switches,
- attenuators, and various types of phase shifting devices?
-
- A. Tunnel diodes
- B. Varactor diodes
- C. PIN diodes
- D. Junction diodes
- *
- 257F-2.1 C 6-8 Bipolar transistors have a Base on the|left side of drawing and an Emitter on|the right(with arrow) Pointing-iN-Part
- What is the schematic symbol for a PNP transistor?
- |
- /────
- │ / \ ├──────
- A. ────┤\ B. < │
- │ > \│
- \──── ├──────
-
-
- /────
- C. │ / D. \ ├──────
- ────┤\ > │
- │ < \│
- \──── ├──────
- *
- 258F-2.2 B 6-8 NPN (Not-Pointing-iN) transistors have|an Emitter(with an arrow) on the right|Arrow always points to the N material
- What is the schematic symbol for an NPN transistor?
- |
- /────
- │ /
- A. ├────── B. ────┤\
- ───>┤ │ >
- ├────── \────
-
-
- /────
- C. D. │ /
- ├────── ────┤\
- ───<┤ │ <
- ├────── \────
- *
- 259F-2.3 B 6-8 Base, emitter & collector
- What are the three terminals of a bipolar transistor?
-
- A. Cathode, plate and grid
- B. Base, collector and emitter
- C. Gate, source and sink
- D. Input, output and ground
- *
- 260F-2.4 C 6-9 Ic/Ie
- What is the meaning of the term alpha with regard to bipolar
- transistors?
-
- A. The change of collector current with respect to base current
- B. The change of base current with respect to collector current
- C. The change of collector current with respect to emitter current
- D. The change of collector current with respect to gate current
- *
- 261F-2.5 C 6-9 Alpha (α)
- What is the term used to express the ratio of change in
- DC collector current to a change in emitter current in a
- bipolar transistor?
-
- A. Gamma
- B. Epsilon
- C. Alpha
- D. Beta
- *
- 262F-2.6 A 6-9 Ic/Ib
- What is the meaning of the term beta with regard to bipolar
- transistors?
-
- A. The change of collector current with respect to base current
- B. The change of base current with respect to emitter current
- C. The change of collector current with respect to emitter current
- D. The change in base current with respect to gate current
- *
- 263F-2.7 B 6-9 Beta (ß)
- What is the term used to express the ratio of change in
- the DC collector current to a change in base current in
- a bipolar transistor?
-
- A. Alpha
- B. Beta
- C. Gamma
- D. Delta
- *
- 264F-2.8 B 6-9 Common base upper frequency limit
- What is the meaning of the term alpha cutoff frequency with regard
- to bipolar transistors?
-
- A. The practical lower frequency limit of a transistor in common
- emitter configuration
- B. The practical upper frequency limit of a transistor in common
- base configuration
- C. The practical lower frequency limit of a transistor in common
- base configuration
- D. The practical upper frequency limit of a transistor in common
- emitter configuration
- *
- 265F-2.9 B 6-9 Alpha cutoff
- What is the term used to express that frequency at which the
- grounded base current gain has decreased to 0.7 of the gain
- obtainable at 1 kHz in a transistor?
-
- A. Corner frequency
- B. Alpha cutoff frequency
- C. Beta cutoff frequency
- D. Alpha rejection frequency
- *
- 266F-2.10 B 6-9 Grounded(common) emitter
- What is the meaning of the term beta cutoff frequency with regard
- to a bipolar transistor?
-
- A. That frequency at which the grounded base current gain has
- decreased to 0.7 of that obtainable at 1 kHz in a transistor
- B. That frequency at which the grounded emitter current gain has
- decreased to 0.7 of that obtainable at 1 kHz in a transistor
- C. That frequency at which the grounded collector current gain
- has decreased to 0.7 of that obtainable at 1 kHz in a transistor
- D. That frequency at which the grounded gate current gain has
- decreased to 0.7 of that obtainable at 1 kHz in a transistor
- *
- 267F-2.11 A 6-9 Junction region
- What is the meaning of the term transition region with
- regard to a transistor?
-
- A. An area of low charge density around the P-N junction
- B. The area of maximum P-type charge
- C. The area of maximum N-type charge
- D. The point where wire leads are connected to the P- or
- N-type material
- *
- 268F-2.12 A 6-8 Max. current
- What does it mean for a transistor to be fully saturated?
-
- A. The collector current is at its maximum value
- B. The collector current is at its minimum value
- C. The transistor's Alpha is at its maximum value
- D. The transistor's Beta is at its maximum value
- *
- 269F-2.13 C 6-10 No collector current
- What does it mean for a transistor to be cut off?
-
- A. There is no base current
- B. The transistor is at its operating point
- C. No current flows from emitter to collector
- D. Maximum current flows from emitter to collector
- *
- 270F-2.14 C 6-10 UJTs have an Emitter(with an arrow)|on the left side of drawing. Also|emitters are drawn at an angle
- What is the schematic symbol for a unijunction transistor?
- |
- ├──────
- A. ├────── B. │ │
- ───>┤ ─────┘ ├─<─┐
- ├────── │ │ │
- ─────┘ ├───┴──
-
-
- /────
- C. \ ├────── D. │ /
- < │ ────┤\
- \│ │ >
- ├────── \────
- *
- 271F-2.15 A 6-10 UJTs have an Emitter on |the left side of drawing
- What are the elements of a unijunction transistor?
-
- A. Base 1, base 2 and emitter
- B. Gate, cathode and anode
- C. Gate, base 1 and base 2
- D. Gate, source and sink
- *
- 272F-2.16 A 6-8 Best Below
- For best efficiency and stability, where on the load-line
- should a solid-state power amplifier be operated?
-
- A. Just below the saturation point
- B. Just above the saturation point
- C. At the saturation point
- D. At 1.414 times the saturation point
- *
- 273F-2.17 B 6-1 Gold is a conductor and germanium|is a semiconductor
- What two elements widely used in semiconductor devices
- exhibit both metallic and non-metallic characteristics?
-
- A. Silicon and gold
- B. Silicon and germanium
- C. Galena and germanium
- D. Galena and bismuth
- *
- 274F-3.1 D 6-11 A diode with a Gate
- What is the schematic symbol for a silicon controlled rectifier?
- |
- ├──────
- A. │ │ B. │
- ─────┘ ├─<─┐ ││/
- │ │ │ ──┤ ├──
- ─────┘ ├───┴── ││
-
-
- ├────── │
- C. │ │ D. │/
- │ ├─<─┐ ──├───
- │ │ │ │
- ─────┘ ├───┴──
- *
- 275F-3.2 A 6-10 A diode with a Gate|Diodes have anodes |and cathodes
- What are the three terminals of an SCR?
- A. Anode, cathode and gate
- B. Gate, source and sink
- C. Base, collector and emitter
- D. Gate, base 1 and base 2
- *
- 276F-3.3 A 6-11 On and off
- What are the two stable operating conditions of an SCR?
-
- A. Conducting and nonconducting
- B. Oscillating and quiescent
- C. Forward conducting and reverse conducting
- D. NPN conduction and PNP conduction
- *
- 277F-3.4 A 6-10 Junction diode with a Gate
- When an SCR is in the triggered or on condition, its electrical
- characteristics are similar to what other solid-state device
- (as measured between its cathode and anode)?
-
- A. The junction diode
- B. The tunnel diode
- C. The hot-carrier diode
- D. The varactor diode
- *
- 278F-3.5 D 6-10 On
- Under what operating condition does an SCR exhibit electrical
- characteristics similar to a forward-biased silicon rectifier?
-
- A. During a switching transition
- B. When it is used as a detector
- C. When it is gated "off"
- D. When it is gated "on"
- *
- 279F-3.6 A 6-11 Parallel diodes to pass AC|With control Gate
- What is the schematic symbol for a TRIAC?
- |
- ├──────
- A │ B. │ │
- ││/ │ ├─<─┐
- ──┤ ├── │ │ │
- ││ ─────┘ ├───┴──
-
-
- │ \ ├──────
- C. │/ D. < │
- ──├─── \│
- │ ├──────
- *
- 280F-3.7 A 6-11 Passes AC
- What is the transistor called which is fabricated as two
- complementary SCRs in parallel with a common gate terminal?
-
- A. TRIAC
- B. Bilateral SCR
- C. Unijunction transistor
- D. Field effect transistor
- *
- 281F-3.8 B 6-11 Gate & Anodes
- What are the three terminals of a TRIAC?
-
- A. Emitter, base 1 and base 2
- B. Gate, anode 1 and anode 2
- C. Base, emitter and collector
- D. Gate, source and sink
- *
- 282F-4.1 B 6-12 Drawing is the same as a diode|With "light rays"
- What is the schematic symbol for a light-emitting diode?
- |
- A. ─┐ B. ─┐ ─┐
- ┌─┬─┬─┬─┬─/─┬─┐ / /
- │ │ │ │ / │ │ │ ───│───
- /
-
-
- C. D.
- ──│││── ───┤o o├───
- ─┘ ■
- *
- 283F-4.2 C 6-12 20 mA & 1.7 volts
- What is the normal operating voltage and current for
- a light-emitting diode?
-
- A. 60 volts and 20 mA
- B. 5 volts and 50 mA
- C. 1.7 volts and 20 mA
- D. 0.7 volts and 60 mA
- *
- 284F-4.3 B 6-12 Forward bias
- What type of bias is required for an LED to produce
- luminescence?
-
- A. Reverse bias
- B. Forward bias
- C. Zero bias
- D. Inductive bias
- *
-